transferable gan layers grown on zno-coated graphene layers for optoelectronic devices
Thick GaN Grown on a Nanoporous GaN Template by Hydride Vapor Phase Epitaxy
Thermally oxidized GaN film for use as gate insulators 1
Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3and NH3
Thermal evaporation furnace with improved configuration for growing nanostructured inorganic materials
Theoretical prediction of GaN nanostructure equilibrium and nonequilibrium
The temperature dependence of optical properties of InGaN alloys
The structure of dislocations in (In,Al,Ga)N wurtzite films grown epitaxially
The role of dislocation scattering inn-type GaN films
The State of Strain in Single GaN
The oxidation of gallium nitride epilayers in dry oxygen
The nucleation of HCl and
The LiNbO3 thin films deposited on the Al0.28Ga0.72NGaN substrate;
The influence of silicon nanoclusters on the optical properties of a-SiNx samples-A theoretical study
The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy
The growth and properties of m-plane InN epilayer on LiAlO2(100) by metal-organic chemical vapor deposition
The fabrication of large-area
The fabrication of large-area, free standing GaN by a novel nanoetching process
The Controlled Growth of GaN
The Controlled Growth of GaN Nanowires
Temperature dependence of the point defect properties of GaN thin films studied by terahertz time domain spectroscopy
Systematic study GaNm面的图很好
Synthesis of GaN nanowires through Ga2O3films' reaction with ammonia
Synthesis and morphology evolution of GaNC nanocables
Study on the formation of dodecagonal pyramid on nitrogen polar GaN
Study on post
Study of Laser-Debonded GaN LEDs
Study of etching induced damage in
Structural properties of β-Ga2O3 formed by dry thermal oxidization process on GaN
Structural evolution of GaN layers grown on (0 0 0 1) sapphire by hydride vapor phase epitaxy
Structural and optical characterization of GaN epilayers grown on Si(1 1 1) substrates by hydride vapor-phase epitaxy
Structural and micromechanical analyses by polarized Raman spectroscopy
Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire
Stress-relaxed growth of n-GaN epilayers
Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial
Strained gallium nitride nanowires
Strain relaxation in GaN nanopillars
Strain influenced indium composition distribution in GaN-InGaN core-shell nanowires
Strain and defects in Si-doped (Al)GaN epitaxial layers
Spontaneous Formation of AlInN Core–Shell Nanorod Arrays by Ultrahigh-Vacuum Magnetron Sputter Epitaxy
Solid-state dewetting of patterned thin films
Site-controlled growth of indium nitride based nanostructures using metalorganic vapour phase epitaxy
SiO2钝化层US20110233519
Si(111)衬底上HVPE+GaN厚膜生长
Short range correlations of misfit
Separation of Thin GaN from Sapphire by Laser Lift-Off Technique
Separation of laterally overgrown GaN template by using selective
SEM写作参考无电极Efficient wet etching of GaN and p-GaN assisted
Self-Separation of a Thick AlN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire
Self-separated freestanding GaN grown on patterned substrate by Hydride Vapor Phase Epitaxy
Self-organized formation and optical study of GaN micropyramids
Self-catalytic solution for single-crystal nanowire and nanotube growth
Selective-area growth of III-V nanowires and their applications
Selective lateral electrochemical etching of a GaN-based superlattice layer
Selective inductively coupled plasma etching of group-
Selective etchingofdislocationsinGaNgrownby
Selective chemical etch of gallium nitride by phosphoric acid
Selective area heteroepitaxy of nano-AlGaN ultraviolet excitation sources for biofluorescence application
Selective area growth of GaN on GaAs(0 0 1) substrates by metalorganic vapor-phase epitaxy
Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching
Roomtemperature photoenhanced wet etching of GaN
Room temperature photonic crystal band
Research Development for Morphology and Function of GaN with Different Metal Catalysts
Reduced thermal quenching in indium-rich self-organized InGaNGaN
Recovery of Dry EtchingInduced Damage in nGaN
Reconstruction of theb-Ga2O3 (10 0) cleavage surface
Recent development of gallium oxide thin film on GaN
Reassembling of Ni and Pt catalyst in the vapor–liquid–solid growth of GaN nanowires
Reaction mechanism of the nitridation of α-gallium oxide to gallium nitride under a flow of ammonia
Rapid Thermal Annealing Characteristics of Mg Doped InN by X-Ray Diffraction
Raman studies of GaN-sapphire thin film heterostructures
Raman Scattering Study of InxGa1−xN Alloys with Low Indium Compositions
Raman and photoluminescence characterization
Radiative defects in GaN nanocolumns
Quaternary Alloy Semiconductor Nanobelts with Bandgap Spanning the Entire Visible Spectrum
PVT growth of GaN bulk crystals
Probing thickness-dependent dislocation storage in freestanding Cu films using residual electrical resistivity
Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate
Preparation of Freestanding GaN and GaN Template by Hydride Vapor Phase
Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates
Practical interpretation of X-ray rocking curves from semiconductor heteroepitaxial layers
Polarity selective etching A self-assisted route for fabricating high density
PL谱写法好,写作一定借鉴Overgrowth ofGaNonGaNnanowiresproducedbymask-lessetching
PL谱六面体2012Chemical Etch Characteristics of N-Face and Ga-Face GaN
PL谱可借鉴Increased Light Extraction From Vertical GaN
PL谱Self-assembled GaN nano-rods grown directly on (1 1 1) Si substrates Dependence on growth conditions
PL谱Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template
PL谱Photoenhanced wet oxidation of gallium nitride
PL谱Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns
PL谱Growth and characterization of freestanding GaN substrates
Plasma induced damage study for n GaN using inductively coupled plasma
PL谱ELOCharacterizationofGaN InGaNmultiplequantumwellsgrownonsapphire
PL铺Investigation of optical properties of nanoporous GaNfilms
PLtemplate by Hydride Vapor
PLImprovement of microstructural and optical properties of GaN layer on sapphire by nanoscale lateral epitaxial overgrowth
Plasma induced damage to ntype GaN
PL characterization of GaN scintillator for radioluminescence-based dosimetry
Photoluminescence Study on Threading Dislocation in GaN Revealed
Photoluminescence study of GaN with dislocations introduced by plastic deformation
Photoluminescence of erbiumimplanted GaN and in situdoped GaNpdf
Photoluminescence of dislocations in plastically deformed GaN
Photoluminescence from structural defects in GaN
Photoenhanced wet etching of gallium nitride in KOH-based solutions
Photo-enhanced chemical wet etching of GaN
Photoelectrochemical etching of P-type semiconductor heterostructures
Patterning GaN Microstructures by Polarity-Selective Chemical Etching
Photoassisted dry etching of GaN
OVERVIEW ON PENDEO – EPITAXY OF GaN – BASED HETEROSTRUCTURES FOR
Optimized ICP etching process for fabrication of oblique GaN
Optimization of inductively coupled plasma deep etching of GaN and etching
Optical properties ofMg
Optical properties of GaN nanopillar
On thenucleation coalescence andovergrowthofHVPEGaNonmisoriented
On the origin of threading dislocations in GaN films
On the origin of basal stacking faults in nonpolar wurtzite films epitaxially
On the ammonolysis of Ga2O3 An XRD, neutron diffraction and XAS
N极拉曼和PL谱Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals
Nitrogen flux induced GaN nanostructure
Nanowire-Templated Lateral Epitaxial Growth of Low-Dislocation Density Nonpolar a-Plane GaN on r-Plane Sapphire
Nanowire Arrays Defined by
Nanostructuring GaN using microsphere lithography
Nanopores in GaN by electrochemical anodization in hydrofluoric acid_ Formation and
Nanopipes in In2O3 Nanorods Grown by a Thermal Treatment
Nanoindentation study on insight of plasticity related to dislocation density
Nanopatterning GaN with microspheres
Nanoheteroepitaxial growth of GaN on Si nanopillar arrays
Nano Processing Techniques Applied in GaN Based
Nano and micro porous GaN characterization using image processing method
Mosaic structure in epitaxial GaN filmvarying with thickness
modeling of threading dislocation reduction in growing GaN layers
MOCVD样品腐蚀可用Etching of n-GaN – Important step in device processing
Microstructures of GaN Thin Films Grown on Graphene Layers
MOCVD Growth of GaN on Sapphire Using a Ga2O3 Interlayer
Misfit dislocation formation via pre-existing threading dislocation glide in
Microstructure of heteroepitaxial GaN revealed by x-ray diffraction
Microstructural characterisation of a prototype layer structure for a GaN-based photonic crystal cavity
Method formodulatingthewaferbowoffreestandingGaNsubstratesvia
MG1223032李永安2014奖助学金评审表
Metal–oxide–semiconductor devices using Ga2O3 dielectrics on n-type
Meet._Abstr.-2012-Silber-3128
Metal-catalyzed semiconductor
Mechanism Underlying Damage Induced in Gallium Nitride Epilayer during Laser Lift-Off Process
Material quality improvement for homoepitaxial GaN and AlN layers grown on sapphire-based templates
Magnetic and electrical properties of ε-Fe3N on c-plane GaN
Manganese-activated gallium oxide electroluminescent phosphor
Low Damage Etching of GaN Surfaces via Bias-Assisted
Light Emission from InGaN Quantum Wells Grown on the Facets
Lift-off ofepitaxialGaNbyregrowthovernanoporousGaN
Large area GaN n-corep-shell arrays fabricated using top-down etching
Less strained and more efficient GaN
Lateral confined epitaxy of GaN layers on Si substrates
Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoimprint lithography
Kinetic Study of the Oxidation of Gallium Nitride in Dry Air
KOH热湿腐蚀法准确估算GaN的位错密度
ITO+films+by+magnetron+sputtering
Ion implantation into GaN
Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN-based light emitting diodes
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition
Investigation of optical properties of InGaN–InN–InGaNGaN quantum-well in the green spectral regime
Interpretation of macropore shape transformation in crystalline silicon upon high temperature processing
Investigation of Ga Oxide Films Directly Grown on n-Type GaN
Intrinsic Mechanisms of Stimulated Emission in Homoepitaxial GaN
Interface Properties of Al2O3 Plasma Etching of GaN Surfaces
In-situ reflectivity observation of GaN layers grown directly on sapphire by HVPE using low-temperature nucleation layers
InGaN/GaN多量子阱热退火的拉曼光谱和荧光光谱
In-Plane Optical Anisotropy of a-Plane GaN Film on r-Plane Sapphire Grown by Metal Organic Chemical vapour Deposition
InGaN Light Emitting Diodes on (100) β-Ga2O3 Substrates by Metalorganic Chemical Vapour Deposition
Influence on the growth temperature for one-dimesional GaN nanostructures by
Influence of the deposition parameters of nucleation
Influence of oxidation and annealing temperatures on quality of Ga2O3 film grown on GaN
Influence of etching condition on surface morphology
Influence of Dry Etching Damage on the Internal Quantum
Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN_GaN Multiple Quantum Wells
Inductively coupled plasma etching of GaN
Inductively coupled plasma etching of GaN using
In situ scanning electron microscope electrical characterization of GaN nanowire nanodiodes using tungsten and tungsten-gallium nanoprobes
Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template
Improvement in aligned GaN nanowire growth using submonolayer Ni catalyst films
Improvements of electronic and optical characteristics of n-GaN-based
Improved emission efficiency of a-plane GaN light emitting diodes with silica
Impact of anisotropic strains on low-frequency dielectric properties and room-temperature polar phases of SrTiO3 epitaxial thin films
Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire
ICP-induced defects in GaN characterized by capacitance analysis
Hydrogen adsorption onb-Ga2O3(1 0 0) surface
Hydrogen on polycrystallineβ-Ga2O3 Surface chemisorption, defect formation,
HVPE生长自支撑GaN技术研究
HVPE生长GaN厚膜光致发光特性研究
HVPE腐蚀坑相似Orthodox etching of HVPE-grown GaN
HVPE Growth of GaN on a GaN Templated (111) Si Substrate
HVPE growth of a thick GaN layer on a GaN templated (111) Si substrate
High-resolutionX-raydiffractionanalysisonHVPE-grownthickGaNlayers
high-quality and uniform graphene films on copper foils
High-performance GaN metal–insulator–semiconductor ultraviolet photodetectors using gallium oxide as gate layer
Highly Strained Metastable Heterojunction between Wurtzite GaN(0001) and Cubic CrN(111)
Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition
High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters
High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers
Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substrates
Growth temperature influence on the GaN nanowires grown by MOVPE technique
Growth of thick GaN layers on c-plane sapphire substrates using stress absorbing layer (SAL)
Growth of thick (110) GaN using a metal interlayer
Growth of GaN nanowires through nitridation Ga2O3films
Growth of Gallium Oxide Nanowires by Pulsed Laser
Growth of GaN Epilayers on Defect-Selective Etched
Growth and properties of ZnO thin film onb-Ga2O3(1 0 0) substrate by
Growth and optical characterisation of multilayers of InGaN quantum dots
GaN晶片的CMP加工工艺研究
Hydride vapor phase epitaxial growth of a high quality GaM film
High-resolution X-ray diffraction analysis on HVPE-grown thick GaN layers
High-Efficiency InGaNGaN Nanorod Arrays by Temperature Dependent
Growth of III-Nitrides with Halide Vapor Phase Epitaxy
Growth of high-quality GaN on FACELO substrate by raised-pressure HVPE
Growth of group III nitride nanostructures on nano-imprinted sapphire substrates
Growth of AlGaN nanowires by metalorganic chemical vapor deposition
Growth and strain characterization of high quality GaN crystal by HVPE
Growth and properties of wide spectral white light emitting diodes
Growth and characterization of freestanding GaN substrates
Growth and applications of HVPE-GaN nanorods
Ga极PL谱.0-S0921452605011579-main
graphene segregated on ni surfaces and transferred to insulators
Gate voltage and structure parameter modulated spin splitting in AlGaNGaN quantum wells
GaN外延薄膜的研究进展
GaN基热氧化物的XPS和椭偏光谱研究
GaN基材料热退火与湿法腐蚀的研究
GaN电感耦合等离子体刻蚀的优化和损伤分析
GaN的生长及其性能研究
gan衬底技术进展
GaN衬底材料相关技术研究-毕业论文终稿
GaN衬底材料相关技术研究
GaN薄膜中的马赛克结构随厚度发生的变化
GaN-based p-type metal-oxide–semiconductor devices with a gate oxide layer grown by a bias-assisted photoelectrochemical oxidation method
GaN_Si薄膜的结构和应力特性研究
GaN Nanowires with Au+Ga Solid Solution Grown on an Si(111) Substrate by Metalorganic Chemical Vapor Deposition
GaN substrates by HVPE
GaN nanocolumns formed by inductively coupled
GaN nanowire surface state observed using deep level optical spectroscopy
GaN nanorod light emitting diode arrays with a
GaN nano-pendeo-epitaxy on Si(111) substrates
GaN etch rate and surface roughness evolution in Cl2 Ar based inductively coupled
GaN etch enhancement in inductively coupled BCl3 plasma with the addition of N2 and SF6
GaN Epilayer Grown on Ga2O3 Sacrificial Layer for Chemical Lift-Off Application
GaN based nanorods for solid state lighting
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Gallium Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching
Gallium nitride and related materialschallenges in
GaAs晶片化学机械抛光的机理分析
Freestanding GaN-substrates and devices
Fully unstrained GaN on sacrificial AlN layers by nano-heteroepitaxy
Free-Standing GaN Layer by Combination of Electrochemical
Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate
Formation of ZnO hexagonal micro-pyramids
Formation of Super Arrays of Periodic
Formation of large-area GaN nanostructures
Formation of large-area GaN nanostructures with controlled geometry
Flame Detection by a β-Ga2O3-Based Sensor
Formation of Hexagonal Pyramids and Pits on V-VI-Polar
Fabrication of nanorod InGaN
Fe-doped semi-insulating GaN substrates prepared by hydride
Fabrication of GaN nanorods by focused ion beam
Fabrication of hexagonal GaN on the surface ofh-Ga2O3single crystal by
Fabricated InGaN Membranes through a Wet Lateral Etching Process
Fabrication of GaN based nanorod light emitting diodes using
Fabrication and optical investigation of a high-density GaN nanowire array
Evolution of Surface Morphology by Wet-Etching of ZnO and GaN with Different
Etching, Raman and PL study of thick HVPE-grown GaN
Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour
Epitaxial growth of Mn-dopedc-Ga2O3on spinel substrate
Epitaxially grown GaN nanowire networks
Epitaxial+Lateral+Overgrowth+of+GaN
Epitaxial growth of aligned GaN nanowires and nanobridges
Epitaxial Catalyst-Free Growth of InN Nanorods on c-Plane
Epitaxial growth and chemical lift-off of GaInN-GaN heterostructures on c- and r-sapphire substrates employing ZnO sacrificial templates
Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed p-Type GaN Surface by Using Ni Nanoporous Template
Enhanced Light Output of GaN-Based
ELO MOVCDCoalescence overgrowth of GaN nano-columns with metalorganic chemical vapor deposition
Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE
ELOCharacterizationofGaN InGaNmultiplequantumwellsgrownonsapphire
Effects of VIII ratio on the growth of a-plane GaN films
Effects of the GaN and AlN nucleation layers on the crack-free AlGaN templates
Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy
Effect of the VIII ratio during buffer layer growth on the yellow
Effect of Ridge Growth on Wafer Bowing and Light Extraction Efficiency of Vertical GaN-Based Light-Emitting Diodes
Effect of repetition nanoindentation of GaN epilayers on a-axis sapphire substrates
Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy
Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica
Effect of Film Thickness on Structural and Electrical Properties
Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy
Effect of growth temperature on gallium nitride nanostructures using HVPE technique
Effect of different electrolytes on porous GaN using
Effect of dry etching conditions on surface morphology and optical
Dry-etch damage and its recovery in In
Dry etching characteristics of GaN using Cl2BCl3 inductively coupled plasmas
Dry etch damage in ntype GaN and its recovery by treatment
Dopant-Selective Photoenhanced Wet Etching of GaN
DissociationofH2molecule on theβ-Ga2O3(100)B surface The critical role
Dislocation Reduction in GaN Epilayers by Maskless Pendeo-Epitaxy Process
Dislocation annihilation in GaN with multiple MgxNy-GaN buffer layers by metal organic chemical vapor deposition
Development and operation of research-scale III–V nanowire growth reactors
Direct imaging of local strain relaxation along the M11
Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
Defects in a-GaN grownon r-sapphirebyhydridevaporphaseepitaxy
Defect-Selective Etching of Semiconductors
Defect and emission distributions in thick HVPE-GaN layers grown on PENDEO templates
Crystallization of low dislocation density GaN by high-pressure solution and HVPE methods
Comparative study of NH4OH and HCletching behaviours on AlGaN surfaces
CL锥体相似Preparation and selective etch
Characterization of InductivelyCoupledPlasma Damage
Different growth rates for catalyst-induced and self-induced GaN nanowires
Defects in wide ap semiconductor
Defect sensitive etching of nitrides
Crystallography and elasticity of individual GaN nanotubes
Correlation between the surface defect distribution and minority carrier
CORRELATION BETWEEN DISLOCATION DISTRIBUTION DENSITY
Controlled Growth of Ordered Nanopore Arrays in GaN
Conical air prism arrays as an embedded reflector for high efficient InGaNGaN light emitting diodes
CL椎顶Preparation and selective etch
Characterization of wide-band-gap semiconductors
CL谱6.2 Growth and Applications of HVPE-GaN Nanorods
CL可参考Study on GaN micro-rod growth by nature
Chemical mechanical polishing of freestanding GaN substrates∗
Characterization of inductively coupled plasma etched surface of GaN using Cl 2 BCl
Characterization of GaN single crystals
Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer
Characterization of GaN epitaxial films grown on SiNx and TiNx
Characterization of dislocation etch pits in HVPE-grown GaN using
Characteristics of GaN thin films by inductively coupled plasma
Changing oblique angles of pyramid facets fabricated by wet etching of N
Bulk GaN crystals and wafers grown
Carbon saturation of arrays of Ni catalyst nanoparticles of different size and pattern uniformity
Bowing of thick GaN layers grown by HVPE using ELOG
Bending in HVPE grown GaN film
Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1-xN films with different Al concentrations
Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures
a面结构示意图
ApplPhysLett_86_131908
Ammonothermalgrowthofhigh-qualityGaNcrystalsonHVPEtemplateseeds
Analysis of magnetic structures of iron nitrides by Landau’s theory of second-order phase transitions
An investigation into the early stages of oxide growth on gallium nitride
Ammonolysis of Ga2O3and its application to the sublimation sourcefor thegrowth of GaN film
AlGaInP+GaAs+外延层的倒易空间图分析
AlGaN_GaN量子阱中子带的Rashba自旋劈裂和子带间自旋轨道耦合作用研究
ALD and MOCVD of Ga2O3 Thin Films Using the New Ga Precursor
Air-spaced GaN nanopillar photonic band gap structures patterned
Acid Etching for Accurate Determination of Dislocation
A Threading Dislocation Density Study of Ge Epitaxial Layer on
A novel GaN photonic crystal
A model for thermal annealing on forming In-N clusters in InGaNP
A liftoff process of GaN layers and devices through nanoporous transformation
A conductivity-based selective etching
A conductivity-based selective etching
A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching
Ⅲ对结晶质量的影响
2014奖助学金评审通知
30% external quantum efficiency from surface textured, thinfilm light
10Self-separated freestanding GaN grown on patterned substrate by Hydride Vapor Phase Epitaxy
9Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation
9 Growth behavior of GaN nanoneedles with changing HClNH3 flow ratio
8Free-Standing GaN Layer by Combination of Electrochemical
7Fabrication of Freestanding GaN Wafers by Hydride Vapor-Phase Epitaxy with Void-Assisted Separation
07Nanopores in GaN by electrochemical anodization in hydrofluoric acid Formation andmechanism
5Shape transformation of nanoporous GaN by annealing From buried cavities
06A liftoff process of GaN layers and devices through nanoporous transformation
4Mechanical Properties of Nanoporous GaN and Its Application for
05Interpretation of macropore shape transformation in crystalline silicon upon high temperature processing
04Nanopores in GaN by electrochemical anodization in hydrofluoric acid Formation and mechanism
3-Growth defects in GaN films on sapphire
3The fabrication of large-area, free standing GaN by a novel nanoetching process
2Free-Standing GaN Layer by Combination of Electrochemical
02Wet etching of GaN, AlN, and SiC a review
1-modeling of threading dislocation reduction in growing GaN layers
_JMR_JMR14_01_S0884291400047026a
(03)Study of dislocation densities of thick GaN films
金纳米颗粒的制备与浓度测试
基于表面等离子共振效应的甲醛与Hg2+传感器
各种溶液的浓度
参考文献
新建 Microsoft Word 文档
刘广力
甲醛与皮革
硕士学位论文答辩呈报表
甲醛气体
加标及离子干扰
智能响应性高分子材料
皮革清洁生产的现在与未来_但卫华
皮革中六价铬的研究进展_孙根行
流动注射分光光度法测定皮革制品中的甲醛_邹玉权
硫离子修饰的金纳米棒用于汞离子检测_陈述
总结的几篇离子检测文章
一种选择性快速测定饮料中游离甲醛的示波极谱法_张文德
室内甲醛污染现状及控制措施研究_邱娟
皮革中甲醛含量的测定和控制_祝妙凤
皮革和毛皮中甲醛含量测定方法的研究_刘显奎
浅谈皮革废水治理技术
皮革中甲醛含量测定问题综述
印染废水水质特征及处理技术综述_戴日成
皮革鞣剂及鞣制机理综述_王伟
皮革废水治理技术的研究进展_游伟民
酸催化正硅酸乙脂溶胶_凝胶二氧化硅薄膜的制备_殷明志
皮革鞣剂研究的现状及存在问题和发展趋势_吕生华